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triquint semiconductor: www. triquint.com (972)9 94-8465 fax (972)994-8504 info-mmw@tqs.com 1 TGC4405-SM april 2007 ? rev - datasheet subject to change without notice. primary applications product description key features measured performance 17 - 27 ghz packaged upconverter ? if input frequency range: 0.5 - 3 ghz ? lo input frequency range: 8 - 13 ghz ? package dimensions: 4 x 4 x 0.9 mm ? bias: vd = 5 v, idq = 425 ma ? 28 dbm otoi ? 13 db conversion gain ? rf output frequency range: 17 - 27 ghz ? k band sat-com ? point-to-point radio the triquint TGC4405-SM is an upconverter with rf output frequencies of 17 to 27 ghz. it contains a frequency doubler and local oscillator (lo) amplifie r, operating at lo input frequencies of 8 - 13 ghz. the TGC4405-SM is in a compact 4 mm x 4 mm package footprint. the TGC4405-SM nominally provides 13 db conversion gain and 28 dbm otoi when operated with lo inputs from 2 - 5 dbm. the TGC4405-SM is ideally suited for low cost marke ts such as point-to-point radio, and k-band sat-com. the TGC4405-SM has a protective surface passivation layer on the mmic providing environmental robustnes s. lead-free and rohs compliant. vd = 5v, idq = 425ma, vmxr = vdbl = -0.9v if = 2ghz @ -8dbm, +2dbm lo vd = 5v, idq = 425ma, vmxr = vdbl = -0.9v if = 2ghz +/- 5mhz @ -8dbm input/tone, +2dbm lo 0 2 4 6 8 10 12 14 16 18 20 17 18 19 20 21 22 23 24 25 26 27 rf output frequency (ghz) conversion gain (db) upper side band lower side band 14 16 18 20 22 24 26 28 30 32 34 17 18 19 20 21 22 23 24 25 26 27 rf output frequency (ghz) otoi (dbm) upper side band lower side band
triquint semiconductor: www. triquint.com (972)9 94-8465 fax (972)994-8504 info-mmw@tqs.com 2 TGC4405-SM april 2007 ? rev - table ii recommended operating conditions table i absolute maximum ratings 1/ 2/ 18 dbm lo input continuous wave power pin lo -0.6 to 16.8 ma doubler supply current range idbl -3.3 to 56.7 ma gate supply current range ig -5 to 0 v mixer supply voltage range vmxr -5 to 0 v doubler supply voltage range vdbl 2/ 21 dbm if input continuous wave power pin if -0.75 to 10.5 ma mixer supply current range imxr 2/ 817 ma drain supply current id -5 to 0 v gate supply voltage range vg 2/ 8 v drain supply voltage vd 12 v drain to gate voltage vd-vg notes value parameter symbol 1/ these ratings represent the maximum operable va lues for this device. stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device and / or affect device lifetime. these are stress ratings only, an d functional operation of the device at these conditions is not implied. 2/ combinations of supply voltage, supply current, i nput power, and output power shall not exceed pd (as listed in ?thermal information?). -0.9 v mixer voltage vmxr -0.9 v doubler voltage vdbl -0.5 v, typical gate voltage vg 425 ma drain current idq 5 v drain voltage vd value parameter symbol see assembly diagram for bias instructions.
triquint semiconductor: www. triquint.com (972)9 94-8465 fax (972)994-8504 info-mmw@tqs.com 3 TGC4405-SM april 2007 ? rev - table iii rf characterization table ghz 0.5 - 3 if input frequency range f if ghz 8 - 13 lo input frequency range f lo dbm 28 f = 17 - 27 ghz output third order intercept @ if input = -8dbm/tone otoi db -10 f = 17 - 27 ghz output return loss orl db 13 f = 17 - 27 ghz conversion gain gain units nominal test conditions parameter symbol bias: vd = 5 v, idq = 425 ma, vmxr = vdbl = -0.9v, vg = -0.5v typical
triquint semiconductor: www. triquint.com (972)9 94-8465 fax (972)994-8504 info-mmw@tqs.com 4 TGC4405-SM april 2007 ? rev - table iv power dissipation and thermal properties -65 to 150 oc storage temperature 320 oc 30 seconds mounting temperature jc = 27.4 (oc/w) tchannel = 128 oc tm = 7e+6 hrs vd = 5 v id = 425 ma pd = 2.13 w thermal resistance, jc 1/ 2/ pd = 2.9 w tchannel = 150 oc tm = 1.0e+6 hrs tbase = 70 oc maximum power dissipation notes value test conditions parameter 1/ for a median life of 1e+6 hours, power dissipati on is limited to pd(max) = (150 oc ? tbase oc)/ jc. 2/ channel operating temperature will directly affec t the device median time to failure (mttf). for maximum life, it is recommended that channel temper atures be maintained at the lowest possible levels. 2/ tbase is defined @ package pin # 17 (ground) power de-rating curve 0 1 2 3 4 5 6 7 -50 -25 0 25 50 75 100 125 150 175 baseplate temp (c) power dissipated (w) tm= 1.0e+6 hrs
triquint semiconductor: www. triquint.com (972)9 94-8465 fax (972)994-8504 info-mmw@tqs.com 5 TGC4405-SM april 2007 ? rev - measured data vd = 5v, idq = 425ma, vmxr = vdbl = -0.9v if = 2ghz @ -8dbm, +2dbm lo -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 20 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 rf output frequency (ghz) conversion gain (db) upper side band lower side band vd = 5v, idq = 425ma, vmxr = vdbl = -0.9v if = 2ghz +/- 5mhz @ -8dbm input/tone, +2dbm lo 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 rf output frequency (ghz) otoi (dbm) upper side band lower side band
triquint semiconductor: www. triquint.com (972)9 94-8465 fax (972)994-8504 info-mmw@tqs.com 6 TGC4405-SM april 2007 ? rev - measured data vd = 5v, idq = 425ma, vmxr = vdbl = -0.9v if = 2ghz @ -8dbm, +2dbm lo -60 -55 -50 -45 -40 -35 -30 -25 -20 -15 -10 -5 0 5 10 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 lo frequency (ghz) output power (dbm) 1x lo frequency 2x lo frequency 3x lo frequency
triquint semiconductor: www. triquint.com (972)9 94-8465 fax (972)994-8504 info-mmw@tqs.com 7 TGC4405-SM april 2007 ? rev - measured data swept lo power vd = 5v, idq = 425ma, vmxr = vdbl = -0.9v if = 2ghz @ -8dbm, lo frequency = 10ghz 8 9 10 11 12 13 14 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 lo power (dbm) conversion gain (db) upper side band lower side band swept if @ -8dbm vd = 5v, idq = 425ma, vmxr = vdbl = -0.9v lo frequency = 10ghz, +2dbm lo 0 2 4 6 8 10 12 14 16 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 3.2 3.4 if frequency (ghz) conversion gain (db) upper side band lower side band
triquint semiconductor: www. triquint.com (972)9 94-8465 fax (972)994-8504 info-mmw@tqs.com 8 TGC4405-SM april 2007 ? rev - measured data vd = 5v vs. 4v, idq = 425ma, vmxr = vdbl = -0.9v if = 2ghz @ -5dbm, +2dbm lo -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 14 15 16 17 18 19 20 21 22 23 24 25 26 27 rf output frequency (ghz) lsb conversion gain (db) 4v, 425ma 5v, 425ma vd = 5v vs. 4v, idq = 425ma, vmxr = vdbl = -0.9v if = 2ghz @ -5dbm, +2dbm lo -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 rf output frequency (ghz) usb conversion gain (db) 4v, 425ma 5v, 425ma
triquint semiconductor: www. triquint.com (972)9 94-8465 fax (972)994-8504 info-mmw@tqs.com 9 TGC4405-SM april 2007 ? rev - measured data vd = 5v vs. 4v, idq = 425ma, vmxr = vdbl = -0.9v if = 2ghz @ -5dbm, +2dbm lo 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 17 18 19 20 21 22 23 24 25 26 27 28 29 30 rf output frequency (ghz) usb otoi (dbm) 4v, 425ma 5v, 425ma vd = 5v vs. 4v, idq = 425ma, vmxr = vdbl = -0.9v if = 2ghz @ -5dbm, +2dbm lo 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 14 15 16 17 18 19 20 21 22 23 24 25 26 27 rf output frequency (ghz) lsb otoi (dbm) 4v, 425ma 5v, 425ma
triquint semiconductor: www. triquint.com (972)9 94-8465 fax (972)994-8504 info-mmw@tqs.com 10 TGC4405-SM april 2007 ? rev - measured data vd = 5v, idq = 425ma, vmxr = vdbl = -0.9v if = 2ghz @ -5dbm, +2dbm lo -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 17 18 19 20 21 22 23 24 25 26 27 28 29 30 rf output frequency (ghz) usb conversion gain (db) -40oc +25oc +70oc vd = 5v, idq = 425ma, vmxr = vdbl = -0.9v if = 2ghz @ -5dbm, +2dbm lo -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 14 15 16 17 18 19 20 21 22 23 24 25 26 27 rf output frequency (ghz) lsb conversion gain (db) -40oc +25oc +70oc
triquint semiconductor: www. triquint.com (972)9 94-8465 fax (972)994-8504 info-mmw@tqs.com 11 TGC4405-SM april 2007 ? rev - electrical schematic bias procedures bias-up procedure ? vg set to -1.5 v ? vmxr set to -0.9v ? vdbl set to -0.9 v ? vd set to +5 v ? adjust vg more positive until idq is 425 ma. this will be ~ vg = -0.5 v ? apply signals to lo and if input bias-down procedure ? turn off signals ? turn vd to 0v ? turn vdbl to 0v ? turn vmxr to 0v ? turn vg to 0v vdbl if in vmxr vd 100 pf 0.01 uf 1 uf resistive fet mixer + baluns rf amplifier doubler 2xlo buffer TGC4405-SM 1 uf 100 pf vg 1 uf 100 pf 1 uf rf out lo in 15 100 pf pin 5 pin 10 pin 12 pin 14 pin 16 pin 13 pin 8 pin 7 pin 2
triquint semiconductor: www. triquint.com (972)9 94-8465 fax (972)994-8504 info-mmw@tqs.com 12 TGC4405-SM april 2007 ? rev - package pinout rf out 16 vmxr 12 vd 10, 14 vg 8, 13 vdbl 7 lo in 5 if in 2 gnd 1, 3, 4, 6, 9, 11, 15, 17, 18 description pin pin #1 identification 1 2 3 4 5 6 7 8 12 11 10 9 13 14 15 16 17 pin #1 dot top view bottom view 18
triquint semiconductor: www. triquint.com (972)9 94-8465 fax (972)994-8504 info-mmw@tqs.com 13 TGC4405-SM april 2007 ? rev - gaas mmic devices are susceptible to damage from el ectrostatic discharge. proper precautions should be observed during handling, assembly and test. mechanical drawing pkg x,y size tolerance: +/- 0.050 thickness: 0.85 units: millimeters 18
triquint semiconductor: www. triquint.com (972)9 94-8465 fax (972)994-8504 info-mmw@tqs.com 14 TGC4405-SM april 2007 ? rev - c1 c3 r5 c2 c4 c7 c10 c5 c8 r1 r4 r3 r2 c9 c6 15 ohm resistor (0402) jumper (0603) 100 pf capacitor (0402) 0.01 uf capacitor (0402) 1 uf capacitor (0402) description c5, c6, c7, c8, c9, c10 r1, r2, r3, r4 c4 r5 c1, c2, c3 part gaas mmic devices are susceptible to damage from el ectrostatic discharge. proper precautions should be observed during handling, assembly and test. recommended assembly diagram vx=vmxr=vdbl=-0.9v vd=5v vg~-0.5v for idq = 425ma nc vmxr and vdbl are connected together
triquint semiconductor: www. triquint.com (972)9 94-8465 fax (972)994-8504 info-mmw@tqs.com 15 TGC4405-SM april 2007 ? rev - gaas mmic devices are susceptible to damage from el ectrostatic discharge. proper precautions should be observed during handling, assembly and test. assembly notes recommended surface mount package assembly ? proper esd precautions must be followed while hand ling packages. ? clean the board with acetone. rinse with alcohol. allow the circuit to fully dry. ? triquint recommends using a conductive solder past e for attachment. follow solder paste and reflow oven vendors? recommendations when developing a sold er reflow profile. typical solder reflow profiles are listed in the table below. ? hand soldering is not recommended. solder paste c an be applied using a stencil printer or dot placement. the volume of solder paste depends on p cb and component layout and should be well controlled to ensure consistent mechanical and elec trical performance. ? clean the assembly with alcohol. typical solder reflow profiles 4 ? 6 c/sec 4 ? 6 c/sec ramp-down rate 10 ? 20 sec 10 ? 20 sec time within 5 c of peak temperature 260 c 240 c max peak temperature 60 ? 150 sec 60 ? 150 sec time above melting point 60 ? 180 sec @ 150 ? 200 c 60 ? 120 sec @ 140 ? 160 c activation time and temperature 3 c/sec 3 c/sec ramp-up rate pb free snpb reflow profile ordering information qfn 4x4 surface mount TGC4405-SM package style part

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